1.This thesis mainly deals with the device drivers design based on ISOS(Integrated Software On Silicon), according to the quick development of xDSL technology, ethernet technology and ADSL2+ Router in recent years.
根据目前国内外的xDSL技术、以太网技术的发展状况,宽带路由器的发展状况,结合科胜讯(Conexant)公司的ISOS(Integrated Software On Silicon)嵌入式操作系统,本文提出了基于ISOS的设备驱动程序设计。
2.By introducing the DVI specification,a DVI circuit system based on the digital signaling receiver SiI 161B from Silicon Image is designed for PDP. Besides,the function and design point of the circuit are analyzed.
通过介绍了数字视频接口DVI规范,以Silicon Image公司的数字解码芯片SiI 161B为基础,设计了一套DVI接口电路,并分析了该电路的功能和设计要点。
3.Organic silicon: silicon oil (silicon grease, silicon suckling liquid, silicon surfactants), silane coupling agent (Organic silicon chemistry reagent), high temperature sulfur rubber, liquid silicon rubber, organic silicon polymer, silicon resin, organic silicon singles, compound etc., organic silicon produce and the related raw material, aid chemical preparation, technique.
有机硅：硅油（硅脂、硅乳液、硅表面活性剂），硅烷偶联剂（有机硅化学试剂）高温硫化橡胶、液体硅橡胶、有机硅聚合物、硅树脂、有机硅单体、复合物等，有机硅生产相关原料、助剂、技术。
4.Room temperature photoluminescence (PL) with a peak at 1 54 μm was observed from silicon oxide,silicon rich silicon oxide,silicon nitride and silicon rich silicon nitride films, all doped with Er and grown by the magnetron sputtering technique.
用磁控溅射淀积掺Er氧化硅、掺Er富硅氧化硅、掺Er氮化硅和掺Er富硅氮化硅薄膜 ,室温下测量这四种薄膜的光致发光 (PL)谱 ,观察到这四种薄膜都具有 1 5 4μm的峰位 ,其强度与薄膜的退火温度有关。
5.The absorption, transportation and distribution of silicon inside the plant, the effect of silicon on resisting plant diseases and insect pests and increasing plant adversity resistance, the effect factor of soil silicon fertility and the applying technology of silicon fertilizer are discussed. At last, it gives the study trend about this field in the next time.
本文从植物对硅的吸收及硅在植物体内的输送和分布、硅素在提高植物抗病虫害能力和增强植物抗逆性上的作用、影响土壤硅素肥力的因素以及硅素肥料的施用技术等几个方面,对土壤硅素肥力及植物硅素营养的研究进展进行了综述,并对今后一段时间该领域的研究趋势做了展望。
6.This paper introduces some recent methods making silicon luminescent: doping of deep level impurities, doping of rare earth ions, porous silicon, nanocrystalline silicon, and Si/SiO 2 superlattice. Two possible luminescence mechanisms are discussed: quantum confinement effect and surface combination effect. Finally we introduce two silicon luminescence devices, showing that their prospect is bright.
硅发光对于在单一硅片上实现光电集成是至关重要的．本文介绍了目前已有的使硅发光的方法：掺深能级杂质，掺稀土离子，多孔硅，纳米硅以及Si／SiO2超晶格，讨论了两种可能的发光机制：量子限制效应和表面复合效应．最后介绍了两个硅发光器件，表明硅发光器件的前景是光明的
7.Moreover, annealed nickel layers and silicon sufaces with nickel layer etched off by HNO3 were examined with ESCA and it was found that there were phosphorous in silicon specimens and both silicon and phosphorous have chemical migration. These show that phosphorous diffuses into silicon specimens and forms covalent bond so that a n-n+ junction is appeared.
用x光电子能谱(ESCA)对退火镍层和经HNO_3腐蚀去镍后的硅表面进行的分析发现,硅内有磷,且硅和磷发生化学位移,这表明磷扩散进入硅中并形成价键结合,形成为n-n~+结。
8.For all kinds of silicon rich silicon oxide films grown with different excess Si contents, each PL spectrum has two peaks at 1.54 and 1.38μm, which originate from Er 3+ and a certain kind of defects, respectively, in the silicon rich silicon oxide.
室温下测量其光致发光谱 ,观察到各谱中都含有 1.5 4和 1.38μm两个发光峰 ,其中 1.5 4和 1.38μm的光致发光峰分别来自Er3+ 和氧化硅中某种缺陷 .
9.The silicon micro-machining technology is used to fabricate the bi-layered silicon microcantilever resonators, the excitation of silicon micro-resonators is achieved using electro-thermal method via fabricating thermal excitation resistance on the silicon microcantilever beam.
利用硅微机械加工工艺制作了双层结构硅微悬臂梁谐振器，通过在硅微悬臂梁上制作的热激励电阻，用电热方法对硅微谐振器实现了激振。
10.Basing on the studying on the optical properties of the porous silicon by photoluminescence technology, this paper discusses the energy band of the porous silicon which is related to the microstructure of the porous silicon, puts forward the main luminescence, calculates the band gap of the porous silicon by the empirical pseudopotental method in the end.
摘要在光致发光技术对多孔硅光学性质研究的基础上讨论了与多孔硅的微观结构有关的多孔硅的能带结构，用能量赝势法模拟计算出多孔硅的能带间隙。
