1.Micron Optics Inc released tunable fiber Fabry-Perot filter recently, which has extremely wide FSR, low insert loss, rapid tuning and narrow 3dB bandwidth. It can be applied in optical communication, fiber sensing, microwave photonics etc.
美国Micron Optics公司新近开发的可调谐光纤法布里-帕罗滤波器,具备了极宽的动态范围,低插入损耗,快速调谐,极窄的3dB带宽等优点,可应用于光通信、光纤传感、微波光子学等方面。
2.The monitoring results showed that the thickness of biofilm in the SCBR was about 80 to 120 micron. Both the total amount of AOB and nitrobacteria decreased with depth in biofilm,most of the nitrification bacteria communities lied in the upper layer of biofilm,about 20 to 30 micron.
结果表明,SCBR内载体表面生物膜的总体厚度在80~120μm左右,氨氧化菌和亚硝酸盐氧化菌主要分布在生物膜表面的20~30μm左右范围内.
3.The measurement principle of the instruments are light fluctuation and light extinction. The measurement ranges are 10 to hundreds micron and 0.05 to 10 micron, respectively, that cover the whole size range of powder. The application of the instruments is benefit for the quality and efficiency of powder production.
粉体的粒度对于粉体而言是最重要的参数,粉体生产中由于缺乏在线监测手段或仪器,一般采用取样分析法,本文介绍了光脉动法和消光法原理及基于该原理的2种在线监测仪器,它们的粒度测量范围分别是10至数百微米和0.05～10μm,可以覆盖粉体的粒度范围,在线监测仪的应用可以提高粉体主产的效率和质量。
4.The gate length of SIT is 0.13 micron and the distance between source and drain is 0.5 micron.
SIT的栅极长度为 0 13μm ,源极和漏极之间距离为 0 5 μm .
5.If the micron of polybag is 38 micron or higher, then no need for warning or air holes.
是不是说：要是胶袋的厚度是38微米或者更厚的话，就不用警告性语标或者打孔了！
6.The micron range for CPPM150 Series is from 1 to 150 micron, nominal rating. Absolute ratings are also available under filter code CPPA150.
CPPM150系列熔喷滤芯的过滤精度为1到150微米公称精度。我们同时也备有绝对精度的供客户选择，其产品代码为CPPA150。
7.Based on the hydrodynamic energy transport model,the influence of variation of negative junction depth caused by concave depth on the characteristics of deep-sub-micron PMOSFET has been studied.The results are explained by the interior physical mechanism and compared with that caused by the source/drain depth.Research results indicate that with the increase of negative junction depth(due to the increase of groove depth),the threshold voltage increases,the sub-threshold characteristics and the drain current driving capability degrade,and the hot carrier immunity becomes better in deep-sub-micron PMOSFET.The short-channel-effect suppression and hot-carrier-effect immunity are better,while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source/drain junction shallow.So the variation of concave depth is of great advantage to improve the characteristics of grooved-gate MOSFET.
基于能量输运模型对由凹槽深度改变引起的负结深的变化对深亚微米槽栅PMOSFET性能的影响进行了分析，对所得结果从器件内部物理机制上进行了讨论，最后与由漏源结深变化导致的负结深的改变对器件特性的影响进行了对比.研究结果表明随着负结深(凹槽深度)的增大，槽栅器件的阈值电压升高，亚阈斜率退化，漏极驱动能力减弱，器件短沟道效应的抑制更为有效，抗热载流子性能的提高较大，且器件的漏极驱动能力的退化要比改变结深小.因此，改变槽深加大负结深更有利于器件性能的提高.
8.A composite coating was prepared by oxygen and acetylene thermal spray welding using the powders composed of Ni-based powder and nano-Al 2O 3,sub-micron-Al 2O 3,micron-Al 2O 3.The effects of the load and time on abrasive resistance were studiesd.
将微米级、亚微米级、纳米级 3种粒度的Al2 O3 与Ni基自熔性合金制成复合粉末后 ,用氧乙炔焰热喷焊工艺制备出复合涂层 ,研究了载荷大小、磨损时间等对涂层耐磨粒磨损性能的影响。
9.A twin continous layer band like microphase separation structure with a fuzzy interfaces has been formed, with the layer band width about 1.0～2.0 micron and the sub layer band width in them about 0.1～0.2 micron.
由于两个网络的固化速度基本同步，所形成的聚合物呈现界面较为模糊的双连续层状微相分离结构，层带宽度约1．0～2．0μm，层带中还有与之垂直重叠的亚片层结构，宽约0．1～0．2μm。
10.Lasers with 800 micron long cavity and 40 micron wide planar electrical stripe have been operated under the pulsed regime at room temperature. At 20℃, the threshold current density is 3 8kA/cm 2 and the external different quantum efficiency is 9 3%.
40 μm条宽、 80 0 μm腔长的平面电极条形结构器件 ,室温下以脉冲方式激射 ,2 0℃下阈值电流密度为 3.8k A/ cm2 ,外微分量子效率为9.3%
