1.AfterHT-29 cells were treated with 40 nmol/L wort-mannin, the levels of phosphorylated Akt (pAkt)and c-FLIP protein were determined by Westernblot, and the transcription of c-FLIP gene wasdetected by reverse transcriptase-polymerasechain reaction (RT-PCR) at the 0, 3rd, 6th, 12th and24th hour.
采用40nmol/L的wortmannin干预HT-29细胞0,3,6,12,24h后,采用Westernblot检测磷酸化Akt和c-FLIP蛋白表达水平,逆转录PCR检测c-FLIP基因的转录水平.
2.Results: 1.Positive expression of FLIP, FADD and PCNA were high in Laryngeal carcinoma , FLIP was 63.4%, FADD was 78.1%, PCNA was 100%.
结果:1、41例喉鳞状细胞癌组织中FLIP,FADD,PCNA阳性表达率分别为63.4%(26/41),78.1%(32/41),100%。
3.Flip Chip (FC) technology, which is widely used in IC packaging, is introduced into the fabrication of three-dimensional packaged integrated power electronics module ( IPEM ) to construct Flip Chip IPEM (FC- IPEM).
倒装芯片(Flip Chip,FC)技术广泛应用于微电子封装中,将该技术引入到三维的集成电力电子模块(Integrated Power Electronics Module,IPEM)的封装中,可以构成倒装芯片集成电力电子模块(FC-IPEM)。
4.15° flip angle; field of view (FOV)= 220 mm×220 mm; voxel dimensions were 0.43 mm×0.43 mm×1.70 mm.
TR=1900ms,TE=3.93ms,flip15°,FOV=220mm×220mm,图像分辨率0.43mm×0.43mm×1.70mm。
5.1.5 Tesla scanner . DCE-MRI were acquired using a 2D spoiled gradient echo pulse sequence(TR/TE/Flip angle=9.7ms/1.7ms/20°) . MSI and PEI of time-signal curve were analyzed.
同时行DCE-MRI检查,采用2D SPGR序列(TR/TE/Flip angle=9.7ms/1.7ms/20°),分析时间-信号曲线参数最大强化斜率(MSI)和正增强积分(PEI),以对侧脑组织为标准参照。
6.In this thesis, we describe some important properties of the dynamic behaviors of several class of time-discrete models of two neurons, which includes stability, asymptotic stability, the existence and attractability of periodic solutions, Flip-bifurcation and Neimark-Sacher-bifurcation.
本学位论文对几类二元离散神经网络模型的动力学性态进行了定性分析，讨论了这些神经网络模型的稳定性、渐近稳定性、周期解的存在吸引性、Flip-分岔和Neimark-Sacker-分岔，全文共分五章。
7.The manufacture of solder bump is one of the key technologies for area array packaging (AAP) such as ball grid array (BGA), chip scale packaging (CSP) and flip chip (FC).
钎料凸台的制造是球栅阵列封装(BGA, ball grid array)、芯片尺寸级封装(CSP, chip scale packaging)及倒装芯片封装(FC, flip chip)等面阵封装的关键技术之一。
8.Over ten arithmetic of weave editing, such as basic symmetric pattern flip, basic symmetric reverse pattern flip, symmetric diagonal pattern flip, waved twills flip and so on are introduced, and all above functions are realized in the system.
作为整个系统的基础,本论文首先研究了经纬组织点取反、角度旋转变换、对称轴变换、翻转变换、山形斜纹变换、移位变换等十几种组织编辑的算法,并在本系统中实现了这些编辑功能。
9.A 4 value TTL gate circuit is used to design 4 value RS flip flop , D flip flop and JK flip flop.
采用自己研究出来的四值TTL门电路 ,设计出了四值RS触发器、D触发器和JK触发器 .
10.GaAs/AlGaAs multlple quantum well (MQW) structure was grown by molecular beam epitaxy. We have researched and fabricated self electro optic effect device (SEED) arrays for flip chip bonded devices. Some investigation on opotelectronic CMOS SEED smart pixels using a hybrid integration of SEED arrays flip chip bonding directly on silicon CMOS circuits is reported.
我们采用 MBE生长出大周期 Ga As/ Al Ga As多量子阱 (MQW)外延材料 ,研制了适用于倒装焊结构的自电光效应器件 (SEED)列阵 ,并与 Si CMOS电路通过倒装焊工艺集成为微光电子集成灵巧象素器件。
