1.This paper reviews our recent work on FSG etching in the dual-damascene technology. The whole etching process consists of four steps, VIA etch, BARC etch, trench etch and nitride remove. Major issues during each step are also discussed in details.
文章研究无中间层双大马士革中FSG刻蚀技术,将刻蚀过程细分为四步实施:VIA通孔刻蚀、BARC刻蚀、Trench沟槽刻蚀和阻挡层刻蚀(Nitride Remove),解决刻蚀过程中出现的主要问题。
2.Strip ribbon acted as the strip pattern of ELO GaN, the crystal quality was improved. After etching in KOH solution (m(KOH)∶m(H_2O)= 1∶ 10), hexagonal etch pits were found on the smooth surface, its density is the same to V defects, which reflected that the hexagonal etch pits were the recurrence of V defects.
用m(KOH)∶m(H2O)=1∶10的KOH溶液腐蚀后,平整的表面出现六角腐蚀坑,密度与原生坑密度相近,认为是原生坑被填满的位置腐蚀后再次出现。
3.Method:The adhesive systems, two total-etch adhesives (All-Bond 2,Single Bond)and two self-etch adhesives (Clearfil SE Bond, iBond) were applied in untreated dentin and treated dentin which covered with ZOE.
方法:选择因正畸拔除的完整、无龋前磨牙; 两种全酸蚀牙本质粘接系统:AllBond 2和SingleBond ,两种自酸蚀牙本质粘接系统:ClearfilSEBond和iBond。
4.Automated etch control compensates for the concentration and temperature variations present in any manufacturing process and provides results that hit the etch target.
自动化的蚀刻控制体系弥补了在线的化学品浓度与反应温度的偏差而达到了精确的蚀刻目标。
5.Objective To observe the influence of acid etch and unacid etch of GIC on compression of composite resin glass ionomer cement filling.
目的 对玻璃离子粘固剂 (GIC)表面采用酸蚀刻处理与非酸蚀刻处理后形成的两组GIC 复合树脂复合体试件进行力学研究 ,以寻找良好的GIC表面处理方法。
6.The chemical etch shapes、rates and activation energies areinvestigated by the H_2O_2 system solution on the low-index faces of GaSb withnative and doped Te grown by Bridgman method in this peper. The relative etch rates for the (100)、(110)、(111)(?)
本文用 H_2O_2系腐蚀剂,对以水平 Bridgman 法生长的、本征和掺 Te 的 GaSb 晶片的低指数面(100)、(110)、(111)(?) 样片进行了化学腐蚀研究。
7.To carve, cut, or etch into a block or surface used for printing.
雕版在用于印刷的材料或其表面雕刻、镌划
8.Reinforcement and Antiseptic of RC Beam Acid Etch in a Factory Building
某厂房钢筋混凝土梁酸腐蚀的加固补强和防腐技术
9.Responsible for Implant /Diffusion/ Etch/ Photo new process development, process in-line control and development.
负责注入/扩散/刻蚀/光刻新工艺的开发及在线控制。
10.Etching morphology of (001) faces of PbWO 4 crystal grown by Bridgman method was observed by using optical microscope. Morphological features and distribution regularity of dislocations were discussed. The relation between features of etch pit and crystallization habit of crystal was revealed.
利用光学显微镜观察了Bridgman法生长的PbWO4晶体 (0 0 1)晶面的腐蚀形貌 ,讨论了位错蚀坑的形态特征 ,分布规律以及与晶体结晶习性的关系 ,同时还观察了亚晶界的形态 ,初步探讨了位错与亚晶界的成因
