1.In the second phase, based on the combination of WBS( the Work Breakdown Structure work resolve construction) and RBS( the Risk Breakdown Structure risk), through controlling the small unit of the easy to management with the targets for progress,cost,quantity and HSE,the Consultant will manage the project construction risks successfully and realize the project objectives.
在项目施工阶段，利用项目WBS（Work Breakdown Structure工作分解结构）和项目RBS（Risk Breakdown Structure风险分解结构）相结合，监理公司通过控制施工中的相对独立的、易于管理的较小单元的进度、费用、质量和HSE目标，进行监理方的项目风险管理，从而达到实现工程项目的总目标。
2.Abstract: The sample breakdown point of a test is defined as the smallest proportion of arbitrary outlier in the sample that reverses the test decision.In this paper,Wegive the sample breakdown point of a test for maximum likelihood estimate of exponential distribution parameter and analyze the asymptotically normal characteristic of the sample breakdown point.
文摘:如何量化一种统计方法对异常值的不敏感性一直是稳健统计研究的一个重要课题.检验的样本崩溃点是样本中能逆转判决的离群值的最小比例.在研究相关文献的基础上，计算出指数分布参数极大似然估计检验的样本崩溃点，并分析了样本崩溃点的渐近正态性，为量化统计方法的稳健性提供了一种新的途径.
3.The breakdown process of propellant gas was studied, calculation method of breakdown threshold value was obtained, the breakdown threshold value of hydrogen and air were calculated; the inverse bremsstrahlung absorption process was studied, calculation method of inverse bremsstrahlung absorption coefficient of hydrogen and argon were calculated.
分析了激光对工质的去穿迁程，得到了去穿阈值的计算方法，计算了激光对空气和氢气的击穿阈值；对工质中激光的逆初韧致吸收过程进行了研究，推导了逆韧致吸收系数的计算公式。
4.This paper presents a physical model of ESD dielectric breakdown in IC silicon dioxide films, discusses the dependence between dielectric breakdown field strength and dielectric thickness by using this model, and analyzes the size effect of the dielectric breakdown voltage and ESD pulses.
提出了电子器件门电路硅氧化层介质击穿的物理模型。 并使用该模型讨论了介质击穿场强与介质厚度的关系 ,解释了介质击穿电压与ESD(静电放电 ,electrostaticdischarge)脉冲的尺寸效应。
5.This paper studied the polling system with breakdown under Bernoulli feedback on the basis of formal results of general breakdown.
在一般损坏的基础上，研究了贝努利反馈下的有损坏的轮询系统。
6.A new method of measured breakdown voltage V B of PN junction by measuring C V characteristic of PN junction has been presented in this paper. It has got more fine curve of breakdown characteristic than traditional method.
提出了一种通过测量PN结的势垒电容的C－V特性来测量PN结的击穿电压VB的方法，与传统的方法相比它有更精细的击穿特性曲线；
7.With the acceptor trap,the electrical field peak at the gate edge is reduced to 56% while Vg=0 V,Vd=60 V and NA=1×1017 cm-3.When breakdown voltage goes beyond a certain voltage,affected by acceptor traps,the electrical field peak at the drain edge will exceed that at the gate edge,and the breakdown will occur in the neighborhood of the drain edge.
当Vg=0 V,Vd=60 V,受主陷阱浓度NA=1×1017cm-3时,栅端电场峰值与不加受主陷阱时相比可下降到56%。 受陷阱电荷影响,当击穿电压大于某个电压时,漏端电场峰值超过栅端电场峰值,此时,击穿发生在漏端。
8.Methods:The embryos in 99 IVF cycles were observed, according to the appearance of the early pronuclear breakdown and early cleavage at 25-29 h post-insemination. Group A included cycles in which all embryos transferred had one early pronuclear breakdown or early cleavage at least;
方法:在受精后25~29h对99个体外受精(IVF)周期中的胚胎进行早期卵裂观察,根据移植胚胎中有无原核消失和卵裂进行分组,A组为移植胚胎中至少有一个是早期原核消失或卵裂的胚胎,B组为移植胚胎在这一观察时间内没有出现早期原核消失或卵裂。
9.Based on the basic structure of IGFET, the authors use new standpoints and methods to analyze the working principle, the breakdown position and the breakdown reason of the transistor.
从场效应管的基本结构出发,用新观点、新方法说明其基本工作原理,击穿的位置,击穿的原因。
10.Based on the theory of the largest rank breakdown of matrix and the corresponding thecroem on A~+ calulation method, this text specially derives calculation process of requesting the largest rank breakdown A=BC of known matrix A, and uses computor language FORTRAN to compile the calculation program of broad sense inverse matrix A~+ which regards matrix element as real number.
本文根据矩阵的最大秩分解理论及关于A~+计算方法的相应定理,着重推导了求已知矩阵A的最大秩分解A=BC的计算过程,采用FORTRAN语言编写了矩阵元素为实数的广义逆矩阵A~+的计算程序。
